| 標題: | 利用電荷幫浦技術粹取金氧半場效電晶體參數的新方法 The novel extraction method of MOS parameters using the charge-pumping technique |
| 作者: | 楊旭明 吳慶源 電子研究所 |
| 公開日期: | 1984 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT732428008 http://hdl.handle.net/11536/52027 |
| 顯示於類別： | 畢業論文 |
- 利用電荷幫浦技術萃取金氧半場效電晶體參數的新方法 / 楊旭明;She-Ming Yang;吳慶源;Ching-Yuan Wu
- A novel charge-pumping method for extracting the lateral distributions of interface-trap and effective oxide-trapped charge densities in MOSFET devices / Li, HH;Chu, YL;Wu, CY
- A new charge-pumping technique for profiling the interface-states and oxide-trapped charges in MOSFET's / Chu, YL;Lin, DW;Wu, CY
- A novel method for extracting the metallurgical channel length of MOSFET's using a single device / Li, HH;Chu, YL;Wu, CY
- A NOVEL EXTRACTION TECHNIQUE FOR THE EFFECTIVE CHANNEL-LENGTH OF MOSFET DEVICES / LI, HH;WU, CY
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