標題: | A novel method for extracting the metallurgical channel length of MOSFET's using a single device |
作者: | Li, HH Chu, YL Wu, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-三月-1996 |
摘要: | A new charge-pumping method with de source/drain biases and specified gate waveforms is proposed to extract the metallurgical channel length of MOSFET's by using a single device. Using two charge-pumping currents of a single nMOSFET measured under different V-GL (V-GH for pMOSFET's), the metallurgical channel length can be easily extracted with an accuracy of 0.02 mu m. It is shown that the proposed novel method is self-consistent with the results obtained by the charge-pumping current measured from multidevices under different gate pulse waveforms and bias conditions. |
URI: | http://dx.doi.org/10.1109/55.485175 http://hdl.handle.net/11536/1438 |
ISSN: | 0741-3106 |
DOI: | 10.1109/55.485175 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 17 |
Issue: | 3 |
起始頁: | 85 |
結束頁: | 87 |
顯示於類別: | 期刊論文 |