由薄複晶矽經熱氧化或熱氮化所製備之穿隧氧化層

標題:	由薄複晶矽經熱氧化或熱氮化所製備之穿隧氧化層 Tunnel oxide prepared by thermal oxidation or nitridation of a thin polysilicon film on silicon
作者:	焦德民雷添福李崇仁電子研究所
公開日期:	1984
URI:	http://140.113.39.130/cdrfb3/record/nctu/#NT732428009 http://hdl.handle.net/11536/52028
Appears in Collections:	Thesis