Full metadata record
DC FieldValueLanguage
dc.contributor.author董建良en_US
dc.contributor.author羅正忠en_US
dc.date.accessioned2014-12-12T02:03:06Z-
dc.date.available2014-12-12T02:03:06Z-
dc.date.issued1984en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT732428028en_US
dc.identifier.urihttp://hdl.handle.net/11536/52049-
dc.language.isoen_USen_US
dc.title以氮離子佈植技術進行選擇性成長矽磊晶層zh_TW
dc.titleThe selective epitaxy of Si using N+ ion implantationen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
Appears in Collections:Thesis