以氮離子佈植技術進行選擇性成長矽磊晶層

Full metadata record

DC Field	Value	Language
dc.contributor.author	董建良	en_US
dc.contributor.author	羅正忠	en_US
dc.date.accessioned	2014-12-12T02:03:06Z	-
dc.date.available	2014-12-12T02:03:06Z	-
dc.date.issued	1984	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT732428028	en_US
dc.identifier.uri	http://hdl.handle.net/11536/52049	-
dc.language.iso	en_US	en_US
dc.title	以氮離子佈植技術進行選擇性成長矽磊晶層	zh_TW
dc.title	The selective epitaxy of Si using N+ ion implantation	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子研究所	zh_TW
Appears in Collections:	Thesis