標題: Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs
作者: Lu, C. Y.
Bahat-Treidel, E.
Hilt, O.
Lossy, R.
Chaturvedi, N.
Chang, E. Y.
Wuerfl, J.
Traenkle, G.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-七月-2010
摘要: In this work, we investigate the relevance of device geometry to the Schottky gate characteristics of AlGaN/GaN high electron mobility transistors. Changes of three-terminal gate turn-on voltage and gate leakage current on the gate-drain spacing, source-gate spacing and recess depth have been observed. Further examinations comparing device simulations and measurements suggest that gate turn-on voltage is influenced by the distribution of electric potential under the gate region which is related to the geometry. By proper design of the device, high gate turn-on voltage can be obtained for both depletion-mode and recessed enhancement-mode devices.
URI: http://dx.doi.org/10.1088/0268-1242/25/7/075005
http://hdl.handle.net/11536/5210
ISSN: 0268-1242
DOI: 10.1088/0268-1242/25/7/075005
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 25
Issue: 7
結束頁: 
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