標題: | Influence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTs |
作者: | Lu, C. Y. Bahat-Treidel, E. Hilt, O. Lossy, R. Chaturvedi, N. Chang, E. Y. Wuerfl, J. Traenkle, G. 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 1-七月-2010 |
摘要: | In this work, we investigate the relevance of device geometry to the Schottky gate characteristics of AlGaN/GaN high electron mobility transistors. Changes of three-terminal gate turn-on voltage and gate leakage current on the gate-drain spacing, source-gate spacing and recess depth have been observed. Further examinations comparing device simulations and measurements suggest that gate turn-on voltage is influenced by the distribution of electric potential under the gate region which is related to the geometry. By proper design of the device, high gate turn-on voltage can be obtained for both depletion-mode and recessed enhancement-mode devices. |
URI: | http://dx.doi.org/10.1088/0268-1242/25/7/075005 http://hdl.handle.net/11536/5210 |
ISSN: | 0268-1242 |
DOI: | 10.1088/0268-1242/25/7/075005 |
期刊: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
Volume: | 25 |
Issue: | 7 |
結束頁: | |
顯示於類別: | 期刊論文 |