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dc.contributor.authorLu, C. Y.en_US
dc.contributor.authorBahat-Treidel, E.en_US
dc.contributor.authorHilt, O.en_US
dc.contributor.authorLossy, R.en_US
dc.contributor.authorChaturvedi, N.en_US
dc.contributor.authorChang, E. Y.en_US
dc.contributor.authorWuerfl, J.en_US
dc.contributor.authorTraenkle, G.en_US
dc.date.accessioned2014-12-08T15:06:39Z-
dc.date.available2014-12-08T15:06:39Z-
dc.date.issued2010-07-01en_US
dc.identifier.issn0268-1242en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0268-1242/25/7/075005en_US
dc.identifier.urihttp://hdl.handle.net/11536/5210-
dc.description.abstractIn this work, we investigate the relevance of device geometry to the Schottky gate characteristics of AlGaN/GaN high electron mobility transistors. Changes of three-terminal gate turn-on voltage and gate leakage current on the gate-drain spacing, source-gate spacing and recess depth have been observed. Further examinations comparing device simulations and measurements suggest that gate turn-on voltage is influenced by the distribution of electric potential under the gate region which is related to the geometry. By proper design of the device, high gate turn-on voltage can be obtained for both depletion-mode and recessed enhancement-mode devices.en_US
dc.language.isoen_USen_US
dc.titleInfluence of the device geometry on the Schottky gate characteristics of AlGaN/GaN HEMTsen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0268-1242/25/7/075005en_US
dc.identifier.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGYen_US
dc.citation.volume25en_US
dc.citation.issue7en_US
dc.citation.epageen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000279319600005-
dc.citation.woscount3-
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