标题: | Broadband Quantum-Dot Infrared Photodetector |
作者: | Lin, Wei-Hsun Tseng, Chi-Che Chao, Kuang-Ping Kung, Shu-Yen Lin, Shih-Yen Wu, Meng-Chyi 光电工程学系 Department of Photonics |
关键字: | Quantum-dot infrared photodetectors (QDIPs) |
公开日期: | 1-七月-2010 |
摘要: | In this letter, we report the five-period quantum-dot infrared photodetectors (QDIPs) with a bi-stacked quantum-dot (QD) structure for a wide and relatively flat detection response ranging from 4 to 11 m with high responsivities. The bi-stacked QD structure consists of a standard InAs QD and an InGaAs-capped InAs QD layer separated by a 50-nm GaAs barrier layer. The device exhibits a wide detection window in the range of 4-11 mu m with high responsivities, which suggests that similar responsivities can be obtained for the standard QD and the InGaAs-capped QD layers in the mid-wavelength (MWIR) and long-wavelength (LWIR) infrared ranges, respectively. The results are advantageous for the development of broadband QDIPs covering MWIR and LWIR ranges based on the stacked QD structures. |
URI: | http://dx.doi.org/10.1109/LPT.2010.2048425 http://hdl.handle.net/11536/5215 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2010.2048425 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 22 |
Issue: | 13 |
起始页: | 963 |
结束页: | 965 |
显示于类别: | Articles |
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