Measuring junction temperature of GaAs solar cells using pulse-width modulation photoluminescence

標題:	Measuring junction temperature of GaAs solar cells using pulse-width modulation photoluminescence
作者:	Yang, M. D. Liao, W. C. Shu, G. W. Liu, Y. K. Shen, J. L. Wu, C. H. Chou, W. C. Lee, Y. C. 電子物理學系 Department of Electrophysics
關鍵字:	Semiconductors;Thermodynamic properties;Luminescence
公開日期:	1-Jul-2010
摘要:	A photoluminescence (PL) technique is presented to measure the junction temperature of GaAs solar cells. The technique utilizes the pulse-width modulation of excitation laser and the temperature dependence of PL spectra. The apparent change of PL energy on duty cycle can be advantageously used for the determination of the junction temperature. Varying the duty cycle from 10% to 75% causes an increase of 2.9 Kin the junction temperature of GaAs solar cells. The carrier temperature of the junction layer was studied to confirm the result obtained from the pulse-width modulation PL (C) 2010 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.ssc.2010.04.004 http://hdl.handle.net/11536/5227
ISSN:	0038-1098
DOI:	10.1016/j.ssc.2010.04.004
期刊:	SOLID STATE COMMUNICATIONS
Volume:	150
Issue:	27-28
起始頁:	1217
結束頁:	1220
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.