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dc.contributor.author許宗仁en_US
dc.contributor.authorXu, Zong-Renen_US
dc.contributor.author錢元中en_US
dc.contributor.author孟光森en_US
dc.contributor.authorQian, Yuan-Zhongen_US
dc.contributor.authorMeng, Guang-Senen_US
dc.date.accessioned2014-12-12T02:04:03Z-
dc.date.available2014-12-12T02:04:03Z-
dc.date.issued1985en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT744436005en_US
dc.identifier.urihttp://hdl.handle.net/11536/52695-
dc.description.abstract本文使用小信號S 參數預測微波的雙閘極砷化鎵電晶體的大信號非線性行為及研究其 穩定性。首使用幾組不同的偏壓組合所測得的小信號S 參數，對參埠的雙閘極砷化鎵 電晶體大信號之穩定性作究，然後利用它們發展出交互作用的S 參數來預測該電晶輸 入大信號後，所產生的諧波輸出功率。zh_TW
dc.language.isozh_TWen_US
dc.subject預測zh_TW
dc.subject砷化鎵zh_TW
dc.subject電晶體zh_TW
dc.subject諧波zh_TW
dc.subject砷化鎵電晶體zh_TW
dc.subject電信zh_TW
dc.subject電子工程zh_TW
dc.subjectTELECOMMUNICATIONen_US
dc.subjectELECTRONIC-ENGINEERINGen_US
dc.title預測雙閘砷化鎵場效應電晶體的非線性行為zh_TW
dc.typeThesisen_US
dc.contributor.department電信工程研究所zh_TW
Appears in Collections:Thesis


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