利用陶瓷封裝電晶體設計20GHz介質振盪器之研究

Abstract

At high frequency, oscillator is normally designed from [S] parameters because of complicated parasitic. While the basic origins of existing negative resistance can not be easily figured out. In this study, the negative resistance of six configurations are examined by appropriate model of HEMT. The frequency ranges of existing negative resistance are predicted. The results are applied to a 20GHz DRO as well as a YIG oscillator. 20GHz DRO is realized directly by the packaged active device and 20GHz DR from the view point of low cost fabrication. The DRO with reasonable performances of output power of -18 dBm and -70dBc/Hz phase noise at 100KHz offset is obtained.