標題: | 利用陶瓷封裝電晶體設計20GHz介質振盪器之研究 20GHz DRO Design usign Package Components |
作者: | 許政雄 Xu, Zheng-Xiong 高曜煌 Gao, Yue-Huang 電信工程研究所 |
關鍵字: | 介質振盪器;陶瓷封裝;負阻抗;電晶體;20GHz 介質振盪器;YIG 振盪器;電信;電子工程;DRO;package;Negative resistance;HEMT;20GHz DRO;YIG oscillator;TELECOMMUNICATION;ELECTRONIC-ENGINEERING |
公開日期: | 1997 |
摘要: | At high frequency, oscillator is normally designed from [S] parameters because of complicated parasitic. While the basic origins of existing negative resistance can not be easily figured out. In this study, the negative resistance of six configurations are examined by appropriate model of HEMT. The frequency ranges of existing negative resistance are predicted. The results are applied to a 20GHz DRO as well as a YIG oscillator. 20GHz DRO is realized directly by the packaged active device and 20GHz DR from the view point of low cost fabrication. The DRO with reasonable performances of output power of -18 dBm and -70dBc/Hz phase noise at 100KHz offset is obtained. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT864435002 http://hdl.handle.net/11536/63641 |
Appears in Collections: | Thesis |