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dc.contributor.authorOrtiz-Conde, A.en_US
dc.contributor.authorRey, A. D. Latorreen_US
dc.contributor.authorLiu, W.en_US
dc.contributor.authorChen, W. -C.en_US
dc.contributor.authorLin, H. -C.en_US
dc.contributor.authorLiou, J. J.en_US
dc.contributor.authorMuci, J.en_US
dc.contributor.authorGarcia-Sanchez, F. J.en_US
dc.date.accessioned2014-12-08T15:06:45Z-
dc.date.available2014-12-08T15:06:45Z-
dc.date.issued2010-06-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2010.01.011en_US
dc.identifier.urihttp://hdl.handle.net/11536/5303-
dc.description.abstractA new double integration-based method to extract model parameters is applied to experimental polysilicon nanowire MOSFETs. The threshold voltage and Subthreshold Slope factor are extracted from noisy measured current-voltage characteristics. It is shown that the present method offers advantages over previous extraction procedures regarding data noise reduction. In addition, the normalized mutual integral difference operator method is scrutinized and an improvement of the method is presented. (C) 2010 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectParameter extractionen_US
dc.subjectThreshold voltageen_US
dc.subjectSubthreshold Slopeen_US
dc.subjectDouble integrationen_US
dc.subjectSuccessive integrationen_US
dc.subjectPolysiliconen_US
dc.subjectNanowireen_US
dc.subjectMOSFETsen_US
dc.subjectNoise reductionen_US
dc.titleParameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedureen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2010.01.011en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume54en_US
dc.citation.issue6en_US
dc.citation.spage635en_US
dc.citation.epage641en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000277500300005-
dc.citation.woscount4-
Appears in Collections:Articles


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