Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels

標題:	Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channels
作者:	Wu, YC Chang, TC Liu, PT Chen, CS Tu, CH Zan, HW Tai, YH Chang, CY 電子工程學系及電子研究所光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics
關鍵字:	lightly doped drain (LDD);nanowire;polysilicon;thin-film transistor (TFT)
公開日期:	1-十月-2005
摘要:	This brief studies the electrical characteristics of a series of polysilicon thin-film transistors (poly-Si TFTs) with different numbers of multiple channels of various widths, with lightly doped drain (LDD) structures. The nanoscale TFT with ten 67-nm-wide split channels (M10) has superior and more uniform electrical characteristics than other TFTs. Additionally, experimental results reveal that the electrical performance of proposed TFTs enhances with each channel width decreasing, yielding a profile from a single-gate to tri-gate structure.
URI:	http://dx.doi.org/10.1109/TED.2005.856797 http://hdl.handle.net/11536/13185
ISSN:	0018-9383
DOI:	10.1109/TED.2005.856797
期刊:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume:	52
Issue:	10
起始頁:	2343
結束頁:	2346
顯示於類別：	期刊論文

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