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dc.contributor.author許詩濱en_US
dc.contributor.authorXu, Shi-Binen_US
dc.contributor.author雷添福en_US
dc.contributor.author潘犀靈en_US
dc.contributor.authorLei, Tian-Fuen_US
dc.contributor.authorPan, Xi-Lingen_US
dc.date.accessioned2014-12-12T02:04:45Z-
dc.date.available2014-12-12T02:04:45Z-
dc.date.issued1986en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT754123002en_US
dc.identifier.urihttp://hdl.handle.net/11536/53151-
dc.description.abstract在本論文中,我們已成功地使用液相磊晶方法研製出一結構稱為埋入式雙條狀結構的 砷化錠一砷化鋁錠半導體雷射。這種結構具有良好的電流局限及光場的局限效應,可 以提高量子效率及具有單一縱模的光學特性,在此我們已製出在室溫下操作時的起振 電流降到150毫安培左右,量子效率更高達50%左右,另外當我們加一電流高於 起振電流的1•4倍時,可發現這種雷射二極體具有單一縱模的光學特性。論文中我 們將詳細的討論這種結構的製程及其操作特性。zh_TW
dc.language.isozh_TWen_US
dc.subject埋入式雙條狀結構zh_TW
dc.subject砷化鎵zh_TW
dc.subject砷化鋁鎵zh_TW
dc.subject半導體雷射zh_TW
dc.subject液相磊晶方法zh_TW
dc.subject電流局限zh_TW
dc.subject光場zh_TW
dc.subject量子效率zh_TW
dc.subject光電學zh_TW
dc.subject光學zh_TW
dc.subject雷射學zh_TW
dc.subject光電工程zh_TW
dc.subjectSEMICONDUCTOR-LASERen_US
dc.subjectELECTRIC-CURRENT-LIMITEDen_US
dc.subjectOPTIC-FIELDen_US
dc.subjectQUANTUM-EFFICIENTen_US
dc.subjectELECTRO-OPTICS-ENGINEERINGen_US
dc.subjectOPTICSen_US
dc.subjectLASERen_US
dc.subjectOPTI-ELECTRONIC-ENGINEERINGen_US
dc.title埋入式雙條狀結構之砷化鎵/ 砷化鋁半導體雷射之研究zh_TW
dc.titleThe fabrication and characterization of GaAs-AlGaAs semiconductor laser with buried twin-ridge structureen_US
dc.typeThesisen_US
dc.contributor.department光電工程學系zh_TW
Appears in Collections:Thesis