| 標題: | Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth |
| 作者: | Huang, H. W. Huang, J. K. Lee, K. Y. Lin, C. F. Kuo, H. C. 光電工程學系 Department of Photonics |
| 公開日期: | 1-六月-2010 |
| 摘要: | GaN-based LEDs with a SiO(2) oxide PQC pattern on an n-GaN layer by nanoimprint lithography are fabricated and investigated. At a driving current of 20 mA on a Transistor-Outline-can package, the light output power of LED III (d = 1.2 mu m) was enhanced by a factor of 1.20. The internal-quantum-efficiency result offers promising potential to enhance the light output power of commercial light-emitting devices with a SiO(2) oxide PQC structure on an n-GaN layer. |
| URI: | http://dx.doi.org/10.1109/LED.2010.2045218 http://hdl.handle.net/11536/5333 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/LED.2010.2045218 |
| 期刊: | IEEE ELECTRON DEVICE LETTERS |
| Volume: | 31 |
| Issue: | 6 |
| 起始頁: | 573 |
| 結束頁: | 575 |
| 顯示於類別： | 期刊論文 |
- Light Extraction Efficiency Enhancement of GaN-Based Light Emitting Diodes on n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth / Huang, H. W.;Lee, K. Y.;Huang, J. K.;Lin, C. H.;Lin, C. F.
- Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a SiO2 Photonic Quasi-Crystal Overgrowth / Huang, H. W.;Huang, J. K.;Lee, K. Y.;Lin, C. F.;Kuo, H. C.
- Enhancement of light output power of GaN-based light-emitting diodes using a SiO(2) nano-scale structure on a p-GaN surface / Huang, H. W.;Lai, F. I.;Huang, J. K.;Lin, C. H.;Lee, K. Y.
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