完整後設資料紀錄
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dc.contributor.authorChang, Y. W.en_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:06:50Z-
dc.date.available2014-12-08T15:06:50Z-
dc.date.issued2007en_US
dc.identifier.isbn978-0-7354-0459-5en_US
dc.identifier.issn0094-243Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/5357-
dc.description.abstractKelvin bump probes were fabricated in flip-chip solder joints, and they were employed to monitor the void formation during electromigration. We found that voids started to form at approximately 5% of the failure time under 0.8 A at 150 degrees C, and the bump resistance increased only 0.02 m Omega in the initial stage of void formation. Three-dimensional simulation was performed to examine the increase in bump resistance at different stages of void formation, and it fitted the experimental results quite well. This technique provides a systematic way for investigating the void formation during electromigration.en_US
dc.language.isoen_USen_US
dc.subjectelectromigration in solder jointsen_US
dc.subjectKelvin structureen_US
dc.titleStudy of electromigration of flip-chip solder joints using Kelvin probesen_US
dc.typeArticleen_US
dc.identifier.journalSTRESS-INDUCED PHENOMENA IN METALLIZATIONen_US
dc.citation.volume945en_US
dc.citation.spage194en_US
dc.citation.epage201en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000252104700018-
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