標題: | Temperature-dependent memory characteristics of silicon-oxide-nitride-oxide-silicon thin-film-transistors |
作者: | Chen, Shih-Ching Chang, Ting-Chang Wu, Yung-Chun Chin, Jing-Yi Syu, Yong-En Sze, S. M. Chang, Chun-Yen Wu, Hsing-Hua Chen, Yi-Chan 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
關鍵字: | Polycrystalline silicon;SONOS;Nonvolatile memory;Thin-film transistor (TFT) |
公開日期: | 3-May-2010 |
摘要: | This study investigates the temperature-dependent memory characteristics of polycrystalline silicon thin-film transistors with oxide/nitride/oxide stack gate dielectrics and N(+) poly-Si gate structures for nonvolatile memory application. As the device was programmed by Fowler-Nordheim tunneling at high temperature, some electrons captured in shallow traps could obtain enough thermal energy to de-trap to the gate, resulting in low programming efficiency. As the programming time increases, the hole injection through the blocking oxide from the gate would further lead the threshold voltage to decrease. In addition, the retention characteristic of the device programmed at higher temperature exhibits better charge storage ability. Because the electrons trapped in the shallow traps of the nitride layer can be easily de-trapped when temperature rises, the memory characteristics are mainly dominated by charges stored in the deep traps. (C) 2009 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.tsf.2009.12.006 http://hdl.handle.net/11536/5418 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2009.12.006 |
期刊: | THIN SOLID FILMS |
Volume: | 518 |
Issue: | 14 |
起始頁: | 3999 |
結束頁: | 4002 |
Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.