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dc.contributor.authorKuo, Jack J. -Y.en_US
dc.contributor.authorChen, William P. -N.en_US
dc.contributor.authorSu, Pinen_US
dc.date.accessioned2014-12-08T15:06:58Z-
dc.date.available2014-12-08T15:06:58Z-
dc.date.issued2010-05-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2010.2044138en_US
dc.identifier.urihttp://hdl.handle.net/11536/5453-
dc.description.abstractThis letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (V(gst)) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility- fluctuation origin 1/f noise for the strained device in the high-vertical bar V(gst)vertical bar regime indicates that the carrier mobility in the strained device is more phonon limited, which represents an intrinsic strain effect on the low-frequency noise.en_US
dc.language.isoen_USen_US
dc.subjectCarrier mobility fluctuationen_US
dc.subjectlow-frequency noiseen_US
dc.subjectprocess-induced strainen_US
dc.subjectuniaxial strained PMOSFETen_US
dc.titleEnhanced Carrier-Mobility-Fluctuation Origin Low-Frequency Noise in Uniaxial Strained PMOSFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2010.2044138en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume31en_US
dc.citation.issue5en_US
dc.citation.spage497en_US
dc.citation.epage499en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000277047300039-
dc.citation.woscount2-
Appears in Collections:Articles


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