Enhanced Carrier-Mobility-Fluctuation Origin Low-Frequency Noise in Uniaxial Strained PMOSFETs

doi:10.1109/LED.2010.2044138

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Kuo, Jack J. -Y.	en_US
dc.contributor.author	Chen, William P. -N.	en_US
dc.contributor.author	Su, Pin	en_US
dc.date.accessioned	2014-12-08T15:06:58Z	-
dc.date.available	2014-12-08T15:06:58Z	-
dc.date.issued	2010-05-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2010.2044138	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5453	-
dc.description.abstract	This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (V(gst)) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility- fluctuation origin 1/f noise for the strained device in the high-vertical bar V(gst)vertical bar regime indicates that the carrier mobility in the strained device is more phonon limited, which represents an intrinsic strain effect on the low-frequency noise.	en_US
dc.language.iso	en_US	en_US
dc.subject	Carrier mobility fluctuation	en_US
dc.subject	low-frequency noise	en_US
dc.subject	process-induced strain	en_US
dc.subject	uniaxial strained PMOSFET	en_US
dc.title	Enhanced Carrier-Mobility-Fluctuation Origin Low-Frequency Noise in Uniaxial Strained PMOSFETs	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2010.2044138	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	31	en_US
dc.citation.issue	5	en_US
dc.citation.spage	497	en_US
dc.citation.epage	499	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000277047300039	-
dc.citation.woscount	2	-
顯示於類別：	期刊論文

文件中的檔案：

000277047300039.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。