Title: Enhanced Carrier-Mobility-Fluctuation Origin Low-Frequency Noise in Uniaxial Strained PMOSFETs
Authors: Kuo, Jack J. -Y.
Chen, William P. -N.
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Carrier mobility fluctuation;low-frequency noise;process-induced strain;uniaxial strained PMOSFET
Issue Date: 1-May-2010
Abstract: This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (V(gst)) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility- fluctuation origin 1/f noise for the strained device in the high-vertical bar V(gst)vertical bar regime indicates that the carrier mobility in the strained device is more phonon limited, which represents an intrinsic strain effect on the low-frequency noise.
URI: http://dx.doi.org/10.1109/LED.2010.2044138
http://hdl.handle.net/11536/5453
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2044138
Journal: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 5
Begin Page: 497
End Page: 499
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