Title: | Enhanced Carrier-Mobility-Fluctuation Origin Low-Frequency Noise in Uniaxial Strained PMOSFETs |
Authors: | Kuo, Jack J. -Y. Chen, William P. -N. Su, Pin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | Carrier mobility fluctuation;low-frequency noise;process-induced strain;uniaxial strained PMOSFET |
Issue Date: | 1-May-2010 |
Abstract: | This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (V(gst)) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility- fluctuation origin 1/f noise for the strained device in the high-vertical bar V(gst)vertical bar regime indicates that the carrier mobility in the strained device is more phonon limited, which represents an intrinsic strain effect on the low-frequency noise. |
URI: | http://dx.doi.org/10.1109/LED.2010.2044138 http://hdl.handle.net/11536/5453 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2010.2044138 |
Journal: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 31 |
Issue: | 5 |
Begin Page: | 497 |
End Page: | 499 |
Appears in Collections: | Articles |
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