互補式金氧半技術中特殊積功率元件之設計與分析

Abstract

在本篇論文中，我們提出兩種互補式金氧半技術製程(CMOS)相容的特殊功 率集積元件，它們分別為閘極關閉閘流體(GTO)及互補式金氧半控制閘流 體(CMCT)。它們主要的工作原理是根據CMOS中以寄生的pnp及 npn雙極性 電晶體所形成的閘流體而來的。這些特殊功率集積元件的設計技巧也以 SPICE模擬它們的等效電路來發展。製作這些元件的佈局 (layout)是以一 種常用於平面型雙極性功率電晶體的"相互交叉式" (interdigitated)的 形狀而製成的。不同佈局的尺寸造成元件特性變化的關係也以SPICE 模擬 其等效電路來說明。這些模擬結果可供設計這些元件。不同佈局尺寸的元 件已經以一般的互補式金氧半技術製造。各元件的電流－電壓關係及它的 開關波型的電路特性已被測量及分析。最後，模擬結果以及測量結果的一 致性顯示了此兩個特殊功率元件的特性。 In this thesis, two fully CMOS process compatible special power devices called the GTO and the CMCT are proposed. First, the operation of each special device is introduced. The main operational principle of the device is based on that of the parasitic SCR formed by the parasitic pnp and npn transistors in bulk CMOS. From the SPICE simulation results with their corresponding lumped equivalent circuits, the design techniques to implement these special power devices in CMOS are developed. The layout pattern to realize these devices is of the interdigitated style. This kind of layout shape has been commonly used in planar power bipolar transistors. The method to integrate the special power devices into a chip with other normal CMOS devices are also discussed. The characteristics of the special power devices with different layout spacings are investigated by SPICE simulation. These results can be applied to the design of these devices. The devices have been fabricated by 0.8um CMOS p-substrate double-poly double-metal CMOS technology with different device spacings which could have different device performance. The I-V curves and the switching waveforms of the special power devices with different layout spacings are also measured and analyzed. Both simulation results and measured results show a good consistence which substantiates the function of the special devices.