室溫加硼酸液相沉積氧化矽之研究

Abstract

為了得到低溫製程的氧化矽, 本論文將描述一種新技術, 叫做液相沉積. 這種氧化矽是在室溫下, 利用矽晶片放入含有過飽和的二氧化矽的氫矽氟 酸溶液中. 如此, 液相沉積氧化矽就能夠被沉積在矽晶片上面了.在本論 文中, 我們將首先探討液相沉積方法的化學反應機制. 未經處理過的液相 沉積膜的物性, 化性, 和電特性將被研究. 接著將探討自然氧化膜, 氧和 氮的熱處理, 和氧和氫的電漿處理對液相沉積膜的特性影響. 為了成就低 溫熱處理的效應, 電漿處理是首次被採用. To get the low temperature process for growing silicon oxide, in this thesis will describe a newly formation technology using liquid phase deposition (LPD). The LPD film was deposited on the Si wafer in hydrofluosilicic acid (H2SiF6) solution supersaturated with silica gel at room temperature (30 C). In the thesis, we will first investigate the chemical mechanism of the LPD. The physical/chemical and electrical of the as- deposited LPD film were investigated. And the effects of the native oxide, oxygen and nitrogen thermal annealing, and oxygen and hydrogen plasma treatment on the properties of the LPD film were also studied. To achieve low temperature annealing effect, plasma treatment is first adpoted.