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dc.contributor.author林冠宏en_US
dc.contributor.authorGuan-Hong Linen_US
dc.contributor.author葉清發en_US
dc.contributor.authorChing-Fa Yehen_US
dc.date.accessioned2014-12-12T02:10:42Z-
dc.date.available2014-12-12T02:10:42Z-
dc.date.issued1992en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT810430075en_US
dc.identifier.urihttp://hdl.handle.net/11536/56939-
dc.description.abstract液相沉積是一種在水性溶液中成長氧化矽膜的方法,整個製程溫度為室溫,
設備的價格不貴,可免去傳統長膜方法所遭遇的一些問題,在未來超大型積
體電路技術的發展上頗具有前景.在本研究中,我們發展出一種新的液相沉
積方法,不需要使用硼酸或鋁粉,只藉著加入純水,便可以在含有過飽和氧
化矽的氫矽氟酸溶液中將氧化矽沉積於矽基板上.液相沉積膜的成長速率
受控於加入水量的多寡以及成長溫度,若能在長膜的基板上先有一層自然
氧化膜的保護,長膜的沉積速率控製在每小時83nm以下,再經過500 'C氧氣
熱處理一個小時,這樣的液相沉積膜會有比較小的漏電流,比較高的崩潰電
場分佈,以及較低的界面缺陷密度.這種液相沉積膜的導電機制與熱氧化膜
中所發現的很類似,主要是由Fowler-Nordheim穿透型導電所控制.
Liquid phase deposition (LPD) is a method of growing silicone
in aqueous solution. Resulting from the room-temperatureess and
inexpensive equipment, the LPD method can avoid thelems from
the conventional techniques. It will be a veryising technique
in the development of VLSI techanology. In thisarch, a novel
LPD method has been developed. The silicon oxidecan be
deposited on the Si-substrate in silica
supersaturatedofluosilic acid (H2SiF6) solution by using H2O
instead of H3BO3l. The silica deposition rate can be controlled
by the amount ofadded. The deposited film is found to be
amorphous and porous incture, and slightly silicon-rich in
composition. The filmited on the substrate surface passivated
with native oxide atposition rate below 83 nm/hr, and annealed
at 500 'C in oxygenent for 1 hour exhibits excellent low
leakage current, highkdown electric field distribution and low
interface-trap density.conduction mechanism of LPD-oxide is
similar to that of thermale, it is dominated by Fowler-Nordheim
tunneling conduction attemperature.
zh_TW
dc.language.isoen_USen_US
dc.subject液相沉積,氧化矽,室溫製程,自然氧化膜,Fowler-Nordheim穿透...zh_TW
dc.subjectdeposition;silicon;process;native;oxide;Fowler-Nordheimen_US
dc.title室溫加水液相沉積氧化矽之研究zh_TW
dc.titleInvestigation of Room-Temperature Liquid-Phase Deposited Silicon with H2O Additionen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
Appears in Collections:Thesis