FABRICATION OF ZN-SI SCHOTTKY-BARRIER DIODE BY CONTROLLING SUBSTRATE TEMPERATURE DURING EVAPORATION

Full metadata record

DC Field	Value	Language
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	CHIU, PL	en_US
dc.contributor.author	MA, CH	en_US
dc.date.accessioned	2014-12-08T15:07:13Z	-
dc.date.available	2014-12-08T15:07:13Z	-
dc.date.issued	1973-01-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5697	-
dc.description.abstract		en_US
dc.language.iso	en_US	en_US
dc.title	FABRICATION OF ZN-SI SCHOTTKY-BARRIER DIODE BY CONTROLLING SUBSTRATE TEMPERATURE DURING EVAPORATION	en_US
dc.type	Note	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	16	en_US
dc.citation.issue	5	en_US
dc.citation.spage	646	en_US
dc.citation.epage	648	en_US
dc.contributor.department	工學院	zh_TW
dc.contributor.department	College of Engineering	en_US
Appears in Collections:	Articles