鈀矽化淺接面之研究

Abstract

本研究藉著BF2+及P+離子植入金屬及金屬矽化物，再經後續退火形成 Pd2 Si/p+n及Pd2Si/n+p的淺接面。離子佈植條件為，固定佈植劑量為 5E15 cm-2，改變佈植能量。我們發現離子佈植的能量為一影響二極體品質的重 要變因。在本實驗中我們藉BF2+離子植入Pd金屬的方法，植入條件為 100KeV-5E15cm-2，經600.degree.C退火，製做出逆向電流為1nA/cm2接面 深度為0.08.mu.m的p+n二極體。另外，我們發現，將BF2+及P+離子植入Pd 金屬或金屬矽化物可以提高Pd矽化物的高溫穩定性，P+離子植入之Pd金屬 矽化物比BF2+離子植入的金屬矽化物可以有較大晶粒，且在高溫退火時有 明顯的晶粒成長。在本實驗中，將探討Pd金屬矽化物之高溫穩定及p-n接 面漏電流之機構。 Shallow p-n junctions have been fabricated by implanting BF //2+ ions and P+ ions into Pd silicide (ITS) or Pd metal (ITM) and subsequently annealing at various temperatures in N//2 ambient. The implantation conditions are selected that the dosage is fixed at 5E15 cm**-2 and the implant energy is changed. In this experiment, the implant energy is the key role to obtain a low-leakage diode. The optimun condition of p+n diodes can be achieved by ITM method with BF//2+ implantaion at 100 KeV to 5E15 cm**-2 and anneald at 600.degree.. The reverse current is 1 nA/cm**2 at -5 V. The junction depth measured by spread resistance is 0.08 .mu.m. After comparing the effects of the implantation and non-implantation, the implantation of BF//2+ ions and P+ ions into thin Pd layer can stabilize the Pd silicide film and prevent it from forming the islands during high temperature annealings. The grain sizes of P+-implanted silicide films are relatively larger than those of BF//2+ -implanted silicide film for different annealing temperatures. High-temperature stability of the palladium silicide films and the leakage-current mechanism are discussed in this study.