标题: 钯矽化浅接面之研究
Study of Pd-Silicided Shallow Junctions
作者: 周培芬
Pei-Fen Chou
郑晃忠
Huang-Chung Cheng
应用化学系硕博士班
关键字: 离子植入金属, 离子植入金属矽化物, 金属矽化物, 浅接面;ITM(Implant Through Metal);ITS(Implant Through ide;Shallow Junction
公开日期: 1992
摘要: 本研究藉着BF2+及P+离子植入金属及金属矽化物,再经后续退火形成 Pd2
Si/p+n及Pd2Si/n+p的浅接面。离子布植条件为,固定布植剂量为 5E15
cm-2,改变布植能量。我们发现离子布植的能量为一影响二极体品质的重
要变因。在本实验中我们藉BF2+离子植入Pd金属的方法,植入条件为
100KeV-5E15cm-2,经600.degree.C退火,制做出逆向电流为1nA/cm2接面
深度为0.08.mu.m的p+n二极体。另外,我们发现,将BF2+及P+离子植入Pd
金属或金属矽化物可以提高Pd矽化物的高温稳定性,P+离子植入之Pd金属
矽化物比BF2+离子植入的金属矽化物可以有较大晶粒,且在高温退火时有
明显的晶粒成长。在本实验中,将探讨Pd金属矽化物之高温稳定及p-n接
面漏电流之机构。
Shallow p-n junctions have been fabricated by implanting BF
//2+ ions and P+ ions into Pd silicide (ITS) or Pd metal (ITM)
and subsequently annealing at various temperatures in N//2
ambient. The implantation conditions are selected that the
dosage is fixed at 5E15 cm**-2 and the implant energy is
changed. In this experiment, the implant energy is the key role
to obtain a low-leakage diode. The optimun condition of p+n
diodes can be achieved by ITM method with BF//2+ implantaion at
100 KeV to 5E15 cm**-2 and anneald at 600.degree.. The reverse
current is 1 nA/cm**2 at -5 V. The junction depth measured by
spread resistance is 0.08 .mu.m. After comparing the effects
of the implantation and non-implantation, the implantation of
BF//2+ ions and P+ ions into thin Pd layer can stabilize the Pd
silicide film and prevent it from forming the islands during
high temperature annealings. The grain sizes of P+-implanted
silicide films are relatively larger than those of BF//2+
-implanted silicide film for different annealing temperatures.
High-temperature stability of the palladium silicide films and
the leakage-current mechanism are discussed in this study.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT810500020
http://hdl.handle.net/11536/57073
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