標題: | Enhancement of the light conversion efficiency of silicon solar cells by using nanoimprint anti-reflection layer |
作者: | Chen, J. Y. Sun, K. W. 應用化學系 Department of Applied Chemistry |
關鍵字: | Nanoimprint;Anti-reflection;Sub-wavelength structure |
公開日期: | 1-Mar-2010 |
摘要: | In this report, the results of the fabrication of nanostructured Si molds by e-beam lithography and chemical wet etching are presented. A home-made pneumatic nanoimprint system was used to transfer the mold patterns to a PMMA layer on a Si template using the spin-coating replication/hot-embossing techniques. The patterned PMMA layer was peeled off from the Si template and directly transferred onto the surface of a poly-Si P-N junction solar cell device to serve as the anti-reflection (AR) layer. It provides a simple and low-cost means for large-scale Use in the production of AR layers for improving solar cell performance. A drastic reduction in reflectivity of the AR layer over a broad spectral range was demonstrated. In addition, the great improvement on the light harvest efficiency of the solar cells from 10.4% to 13.5% using the nanostructured PMMA layer as the AR layer was validated. (C) 2009 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.solmat.2009.11.028 http://hdl.handle.net/11536/5743 |
ISSN: | 0927-0248 |
DOI: | 10.1016/j.solmat.2009.11.028 |
期刊: | SOLAR ENERGY MATERIALS AND SOLAR CELLS |
Volume: | 94 |
Issue: | 3 |
起始頁: | 629 |
結束頁: | 633 |
Appears in Collections: | Articles |
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