標題: S頻帶高效率及高功率放大器
S band high efficiency and high power amplifier
作者: 葉士豪
Ye, Shi-Hao
周復芳
Zhou, Fu-Fang
電信工程研究所
關鍵字: S顏帶高效率;高功率放大器;電信;電子工程;TELECOMMUNICATION;ELECTRONIC-ENGINEERING
公開日期: 1992
摘要: 本論文是設計一在S
頻帶上的高效率且高功率放大器,我們實際地做出這個電路,並且量測其結果。此高
效率放大器因低功率損耗所以其體積小,重量輕,適用於可攜式無線電系統。
在設計的過程中,我們使用用一等效模型來模擬電晶體的特性,如此便可借由電腦輔
助設計軟體來模擬此電路。本放大器的設計概廓主要是來自一諧波反動放大器的理念
,諧波反動放大器是由一組功率電晶體構成,這關鍵在於流經兩電晶體的通路中,二
階諧波可相互抵消,因此造成一種穩定的開關現象,便可提高放大器的效率。最後,
我們設計、製作、測量一個2.2GHz達到百分之五十八功率增加效率和輸出功率2.55瓦
特的微波放大器。
In this thesis, a S band high efficiency and high power
amplifier is designed. Fabrication, and measurements of the
circuit are also presented. This amplifier has low power
consumption, therefore, battery size can be small and light
weight and very suitable for portable radio unit. This paper
reports on a design routine to design the high efficiency power
amplifier. The nonlinear GaAs FET''s device model was created
and it provide us with the large-signal information for
computer aided design. This amplifier design is from the
mechanism of Harmonic Reaction Amplifier (HRA). The HRA is
basically constructed with a pair of power FETs. The technical
originality lies in a provision of an interconnecting circuit
concerning a second-harmonic output component between FETs.
This additional circuit realizes an efficient and stable
switching-mode operation, which required for the attainment of
highly efficient microwave power amplification. This amplifier
circuits is constructed with microstrip line. Experimental
results at 2.2 GHz are maximum power-added efficiency of 58 %
and highest output power of 2.55 W.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT814436004
http://hdl.handle.net/11536/57491
顯示於類別:畢業論文