标题: | S频带高效率及高功率放大器 S band high efficiency and high power amplifier |
作者: | 叶士豪 Ye, Shi-Hao 周复芳 Zhou, Fu-Fang 电信工程研究所 |
关键字: | S颜带高效率;高功率放大器;电信;电子工程;TELECOMMUNICATION;ELECTRONIC-ENGINEERING |
公开日期: | 1992 |
摘要: | 本论文是设计一在S 频带上的高效率且高功率放大器,我们实际地做出这个电路,并且量测其结果。此高 效率放大器因低功率损耗所以其体积小,重量轻,适用于可携式无线电系统。 在设计的过程中,我们使用用一等效模型来模拟电晶体的特性,如此便可借由电脑辅 助设计软体来模拟此电路。本放大器的设计概廓主要是来自一谐波反动放大器的理念 ,谐波反动放大器是由一组功率电晶体构成,这关键在于流经两电晶体的通路中,二 阶谐波可相互抵消,因此造成一种稳定的开关现象,便可提高放大器的效率。最后, 我们设计、制作、测量一个2.2GHz达到百分之五十八功率增加效率和输出功率2.55瓦 特的微波放大器。 In this thesis, a S band high efficiency and high power amplifier is designed. Fabrication, and measurements of the circuit are also presented. This amplifier has low power consumption, therefore, battery size can be small and light weight and very suitable for portable radio unit. This paper reports on a design routine to design the high efficiency power amplifier. The nonlinear GaAs FET''s device model was created and it provide us with the large-signal information for computer aided design. This amplifier design is from the mechanism of Harmonic Reaction Amplifier (HRA). The HRA is basically constructed with a pair of power FETs. The technical originality lies in a provision of an interconnecting circuit concerning a second-harmonic output component between FETs. This additional circuit realizes an efficient and stable switching-mode operation, which required for the attainment of highly efficient microwave power amplification. This amplifier circuits is constructed with microstrip line. Experimental results at 2.2 GHz are maximum power-added efficiency of 58 % and highest output power of 2.55 W. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT814436004 http://hdl.handle.net/11536/57491 |
显示于类别: | Thesis |