專利技術與權利範圍分析--以薄膜電晶體液晶顯示器為例

Abstract

專利為保護發明技藝之法律文獻，同時也蘊藏了相當豐的技術資訊。在考 量企業的發展策略時，若能蒐集相關專利，加以系統化整理分析，進一步 建立專利資料庫，可做為企業在技術、經營、以及權利方面，迅速、具體 、有效而且方便的資訊來源。本研究針對從APS/CAPS上檢索而得，與薄膜 電晶體(TFT)技術相關的356篇美國專利，進行分析並得如下之結論： (1)檢視TFT技術的生命週期。統計TFT各年度申請件數與申請人數，並繪 成圖表，據以說明TFT技術從1989年起已進入成熟期。 (2)觀察TFT的技術 發展。以TFT主動層所採用之材料區分，發現a-Si TFT為80年代的研發主 流。但自1991年起， p-Si TFT的申請件數已凌駕其上。 (3)TFT漏電電流 抑制與寄生電容對策的專利技術分析。依目的/功效、所採技術手段分類 ，並依申請順序列出相關專利的技術要旨，提供技術趨勢分析與技術發展 規劃之重要參考。 (4)判斷TFT技術之重要專利。經由專家協助挑選三件 重要專利，並以此為基礎，進行引用關係分析，從中篩選出被引用次數最 多的三件重要專利。 (5)重要專利之權利範圍分析。針對所得之六篇重要 專利，解讀其權利請求項，整理其依附關係，並以圖表方式表現其權利範 圍。 Patent literatures are of dual characteristics as technical and legal documents. In addition to the legal protection from infrigement, patents contain a great deal of technology associated information. This paper presents competitive analysis, development trend and claim analysis for TFT (Thin Film Transistor) patents. Selected subjects of TFT technologies are also identified for leakage currents and parasitic capacitor of TFT. It is found that Japan leads in the TFT technology and Sharp plays a key role in the world-wide competition. The development of TFT technologies has grown to relatively mature status and a variety of pertaining technologies have emerged. Claim analysis of major patents indicates that the TFTs have evolved from amorphous silicon to polycrystalline silicon in the active region materials from 80s to This study demonstrates that the TFT technology can be evaluated with patent information in terms of technology competition and development trend. The analytical schemes of patent analysis may also be improved with choosing accurate keywords from the database of USPTO, or applying the lately developed F-term (a more detailed and fixed classification systems) from PATOLIS system of Japan.