A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics

doi:10.1109/LED.2009.2037986

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DC Field	Value	Language
dc.contributor.author	Su, Nai-Chao	en_US
dc.contributor.author	Wang, Shui Jinn	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:07:19Z	-
dc.date.available	2014-12-08T15:07:19Z	-
dc.date.issued	2010-03-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2009.2037986	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5776	-
dc.description.abstract	We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-mu s speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-kappa layers.	en_US
dc.language.iso	en_US	en_US
dc.subject	Charge-trapping-engineered Flash (CTEF)	en_US
dc.subject	high-kappa	en_US
dc.subject	InGaZnO	en_US
dc.subject	metal-oxide-nitride-oxide-semiconductor (MONOS)	en_US
dc.subject	nonvolatile memory (NVM)	en_US
dc.title	A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2009.2037986	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	31	en_US
dc.citation.issue	3	en_US
dc.citation.spage	201	en_US
dc.citation.epage	203	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000274995300008	-
dc.citation.woscount	15	-
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