活性離子蝕刻鉈系高溫超導薄膜微橋的研究

Abstract

在本研究中, 藉由半導體工業上活性離子蝕刻系統, 來製備鉈系高溫超導 薄膜微橋. 活性離子蝕刻系統具有方向性的蝕刻特性, 有助於控制元件線 寬. 實驗結果顯示我們利用四氯化矽加氬的混合氣體蝕刻超導薄膜後反應 沉積物可以利用極稀的鹽酸(1:10000) 去除, 而裸露出未被反應過的薄膜 本身. 此步驟一再重覆直至微橋蝕刻成功. 對於鉈系2223相, 我們成功的 蝕刻出具有良好圖形轉移線寬微米級與次微米級的微橋. 對於鉈系 2212相, 利用參數條件的改變, 亦可以成功的蝕刻出良好的圖形轉移的微 米級微橋. 藉由傳輸電性的量測, 得知超導微橋性質並沒有太大的改變. It is reported here the fabrication of the microbridge on Tl -based superconducting films by a reactive ion etching (RIE) system. The anisotropic etching character of the RIE system is very helpful to control the linewidth of the devices. After etching thee films with mix gas of SiCl4 and Ar, the reactive deposits were removed by very ditute aqua solution of HCl (1: 10000) and fresh surfaces were revealed. These steps were re- peated again and again until the microbridge were successfully fabricated. For the Tl-2223 films, we fabricated micron- and submicron-bridges with good pattern transfer. For the Tl-2212 films, we aslo fabricated micron-bridges with good pattern transfer by changing the etching parameters. Mesurements showed that the electric transport properties of the bridges were not changed too much.