磊晶狀鉈系2223相高溫超導薄膜製作研究

Abstract

本研究利用直流濺鍍及後熱處理方式, 對鉈系2223相磊晶狀薄膜生成溫 度;時間及後熱處理時所使用的補償進行研究. 經由光學顯微鏡;掃描式電 子顯微鏡;能量散射分析儀及X光射線的分析我們得以知道鉈系2223相高溫 超導薄膜的成長機制. 經本研究之後我們發現磊晶狀薄膜成長的最佳後熱 處理時間為二十五分鐘, 並且後熱處理時以爐冷方式降溫, 將可以得到具 有高臨界電流的薄膜. 另外後熱處理時所使用的補償的改進, 將可以提供 良好的薄膜成長環境. The epitaxial growth mechanism of high Tc Tl-based 2223 phase superconducting thin films were investigated. By using two -step method including DC-sputering and post-annealing, the effect of annealing temperature, dwell time and thin film compen -sation which are the most important parameters to thin film epitaxial growth were studied. From optical microscope, SEM, EDX and XRD,we found the growth step of 2223 phase epitaxial thin films. The optimal annealing dwell time is 25 minutes. We found that high Jc thin films would be grown with furnace-cooling process, the suitable thin film compensation improves an optimal growth environment.