靜態隨機存取記憶體之薄膜電晶體技術之研究

Abstract

純粹快速高溫回火處理是有潛能取代長時間爐管回火做為非晶矽再結晶時 的處理方法, 同時由變壓耦合電漿產生的氫氣電漿可以更有效的填補存在 晶粒間的載子捕捉中心. 整合這些製程條件, 配合汲極補償結構, 即可容 易以合乎經濟效益的方式生產具有高 開啟/關閉 電流比 的薄膜電晶體. It has been found that pure RTA treatment has the potential to replace the furnace annealing for the method of recrystallization of the amorphous silicon, and that the hydrogenation plasma produced by TCP could more effectively passivate the trap centers in the grain boundaries. Integrating these processing conditions with the offset-drain structure, it is easy to economically the TFT's with high on/off-current ratio.