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dc.contributor.authorKao, Shih-Chinen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorHuang, Jung-Jieen_US
dc.contributor.authorKung, Bo-Chengen_US
dc.date.accessioned2014-12-08T15:07:22Z-
dc.date.available2014-12-08T15:07:22Z-
dc.date.issued2010-03-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2009.2039261en_US
dc.identifier.urihttp://hdl.handle.net/11536/5803-
dc.description.abstractHydrogenated amorphous silicon thin-film transistors on colorless polyimide substrates were successfully fabricated at a low process temperature (160 degrees C). The gate leakage current is as low as 10(-13) A, while the field-effect mobility is 0.42 cm(2)V(-1) . s(-1), and the subthreshold swing is 0.77 V/dec. Using bias-temperature stress on devices with different channel widths, the enhancement of self-heating effect on bias-stressed reliability is investigated for the first time. Elevated temperature due to self-heating effect is estimated either by extending the bias-stressed model or by modifying the thermal equivalent circuit model. Degradation of device reliability on a bent substrate is also significant when self-heating effect is incorporated.en_US
dc.language.isoen_USen_US
dc.subjectFlexibleen_US
dc.subjecthydrogenated amorphous silicon thin-film transistor (a-Si: H TFT)en_US
dc.subjectreliabilityen_US
dc.subjectself-heatingen_US
dc.titleSelf-Heating Effect on Bias-Stressed Reliability for Low-Temperature a-Si:H TFT on Flexible Substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2009.2039261en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume57en_US
dc.citation.issue3en_US
dc.citation.spage588en_US
dc.citation.epage593en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000274993100006-
dc.citation.woscount1-
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