標題: | Self-Heating Effect on Bias-Stressed Reliability for Low-Temperature a-Si:H TFT on Flexible Substrate |
作者: | Kao, Shih-Chin Zan, Hsiao-Wen Huang, Jung-Jie Kung, Bo-Cheng 光電工程學系 Department of Photonics |
關鍵字: | Flexible;hydrogenated amorphous silicon thin-film transistor (a-Si: H TFT);reliability;self-heating |
公開日期: | 1-三月-2010 |
摘要: | Hydrogenated amorphous silicon thin-film transistors on colorless polyimide substrates were successfully fabricated at a low process temperature (160 degrees C). The gate leakage current is as low as 10(-13) A, while the field-effect mobility is 0.42 cm(2)V(-1) . s(-1), and the subthreshold swing is 0.77 V/dec. Using bias-temperature stress on devices with different channel widths, the enhancement of self-heating effect on bias-stressed reliability is investigated for the first time. Elevated temperature due to self-heating effect is estimated either by extending the bias-stressed model or by modifying the thermal equivalent circuit model. Degradation of device reliability on a bent substrate is also significant when self-heating effect is incorporated. |
URI: | http://dx.doi.org/10.1109/TED.2009.2039261 http://hdl.handle.net/11536/5803 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2009.2039261 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 57 |
Issue: | 3 |
起始頁: | 588 |
結束頁: | 593 |
顯示於類別: | 期刊論文 |