集積雙閘流體及三閘流體元件之分析與設計

Abstract

本論文研究之主題為分析與設計一集積電路技術相容之功率元件,我們採 用雙閘流體與三閘流體當作研究主題.此電路是在0.8微米，雙層複晶矽， 雙層金屬線的製程技術上所設計完成的,內容分為緒論，元件理論分析,元 件佈局設計,量測結果與討論,與未來改進方向等. In this thesis,two power devices called DIAC and TRIAC are tudying and analysis. They are implemented as planar and integ- ated circuit technology compatible structures. The devices have been fibricated by CMOS and BiCMOS process.e performances have been measured. The relations between differ-t parameters have been discussed. And future work have been pro-sed.