快速加熱N2O之氧化: 介電質之成長和元件之應用

Abstract

本論文分為化學機械磨平(CMP)與快速加熱氧化(RTO)兩大部分.在極大型 積體電路技術方面,化學機械磨平已成為不可或缺的技術.在本實驗中,我 們對於化學機械磨平有廣泛的研究.結果顯示,針對不同之介電質,其磨平 率亦不同.而其中壓力與轉速為主要調變之參數.高品質的氧化層為積體電 路成功之要素,近來以快速加熱N2O成長氧化層受到極廣泛之注意.因其對 熱載子之捕捉及硼離子之阻擋均有較佳之結果.本實驗分析不同氣體,溫 度,壓力,及時間對氧化速率的影響.低壓快速加熱氧化為本論文重點之一. 另外不同晶向及摻雜濃度之影響亦屬本研究範圍.在高摻雜矽晶氧化中,氧 化增進率會隨著晶向,摻雜濃度,氧化溫度不同而有所改變. This thesis presents two major areas of research: chemical mecha- nical polishing and rapid thermal oxidation. Chemical mechanical polishing (CMP) recently has emerged as a new element in ultra large scale integrated (ULSI) process technology. In this study, we present extensive results on dielectric planarization using CMP. Results indicate that polising rates vary with different dielectrics. Key parameters in determining the polishing rate are down force pressure and platen rotation speed. Nitridation of SiO2 is becoming important as devive sizes are scaling down because its superior property against hot carrier trapping and resistance to boron penetration in the P+ polysilicon. Rapid thermal N2O and O2 oxidation have been carried out and growth kinetics have been established. The dependence of oxide growth on the temperature, pressure and time has been analyzed. Low pressure rapid thermal oxidation in O2 and N2O, to the best our knowledge, was reported for the first time. We also present the wafer orientation and doping concentration dependence of rapid thermal N2O oxidation. The degree of oxidation rate enhancement, its dependence on the wafer orientation, oxidant ambient, and oxidation temperature are presented.