電荷耦合元件的電荷傳遞與邊際電場效應之理論分析

Abstract

本文提出一個分析模擬工具，用來模擬包含電荷容量模型與可解析之電荷 傳遞效率的電荷耦合元件ｏ在本論文中所使用的無電荷表面電位由傅立葉 級數非常容易求得ｏ首先，我們提出一個簡易電荷容量模型來模擬電荷信 號分佈並得到數值結果之驗證ｏ並且，我們提出一個新的方法由最後時間 常數來求最小邊際電場ｏ藉由此方法與電荷信號分佈，我們解釋了關於短 閘長度之爭議ｏ此外，模擬結果顯示由於電荷遮閉效應使得傳遞電荷數量 與傳遞效率存在之平衡性ｏ最候，我們提出一個可解析之效率模型來模擬 不同溫度下之傳遞效率並得到很好的實驗結果驗證ｏ由於此模型之建立， 我們可以得到能量函數之界面缺陷密度(interface state)ｏ Presented here is an analysis simulation tool for Charge- coupled devices(CCD), including charge capacity model and charge transfer inefficiency analytical model with and without considering effective fat zero (dark current). The surface potential with no minority carrier in our simulation is so easy to get by Fourier series, without using numerical method and the CPU time is very greatly reduced. We firstly propose a simple charge capacity model to simulate signal-charge distribution and verified by numerical results. And we propose a new method to determine the minimum fringing field from the final time constant. By this new method and charge-signal distribution we can explain the controversy of the result of the short gate length. In addition, simulation results shows that a trade-off between the transfer efficiency and the magnitude of signal charge due to the charge screening effect. Finally, a analytical model of wide range temperature is proposed and simulation results matches the experimental data very good. By this model, we can obtain a complete energy- dependent interface state distribution.