標題: 以溶膠-凝膠法製備PLT鐵電薄膜及其電性之研究
Preparation and Electrical Properties of PLT Ferroelectric Thin Film by Sol-Gel Processing
作者: 呂照全
Jaw-Chyung Leu
曾俊元
Tseung-Yuen Tseng
電子研究所
關鍵字: 溶膠-凝膠法;鐵電薄膜。;Sol-Gel;Ferroelectric thin film;
公開日期: 1993
摘要: 本論文以溶膠-凝膠法成功地製備出不同鑭濃度(0~28 mol%)結果的PLT 鐵
電薄膜,以Pt/Ti/Si為基板,經600?C燒結30分鐘,結果可得到無龜裂 且晶
粒大小均勻(約100nm)且表面平坦的PLT薄膜.本實驗所製備的PLT0,
PLT10,PLT28和PLT28薄膜,其介電係數分別為 198,256,370,和588,關於
PLT鐵電薄膜的主要傳導機構,本文亦加以探討.利用傳統積體電路製程,以
PLT0,PLT10,PLT20和PLT28為材料所製備 出的PLT薄膜電容,其電荷儲存密
度分別為0.35,0.46, 0.66和1.03uC/cm2 -V.
The La-modified lead titanate(PLT) with various lanthanum
contents(0~28mol%)has been prepared by sol-gel processing. The
PLT thin films deposited on Pt/Ti/Si substrate at 600?C for 30
min. possess crackinng-free, uniform grain size(about 100nm),
and flat surface properties. The dielectric constants of the
PLT thin films are 198, 256, 370, and 588 for PLT0, PLT10,
PLT20, and PLT28, respectively. The dominant conductance
mechanism of the PLT thin film has also been discussed. The
conventional integrated-circuit processing has been applied to
fabricated the PLT thin film capacitors. The charge storage
densities of PLT thin film capacitors are 0.35, 0.46, 0.66, and
1.03uC/cm2-V for PLT0, PLT10, PLT20, and PLT28, respectively.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT820430064
http://hdl.handle.net/11536/58065
顯示於類別:畢業論文