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dc.contributor.authorLin, Chao-Chengen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorTu, Chun-Haoen_US
dc.contributor.authorChen, Shih-Chingen_US
dc.contributor.authorHu, Chih-Weien_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.contributor.authorChen, Sheng-Chien_US
dc.contributor.authorLin, Jian-Yangen_US
dc.date.accessioned2014-12-08T15:07:23Z-
dc.date.available2014-12-08T15:07:23Z-
dc.date.issued2010-02-24en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/43/7/075106en_US
dc.identifier.urihttp://hdl.handle.net/11536/5823-
dc.description.abstractWe investigated the formation and charge storage characteristics of Mo nanocrystals in silicon oxide and in silicon nitride by rapid thermal annealing of oxygen- and nitrogen-incorporated Mo and Si mixed layers. A high density of Mo nanocrystal (6 x 10(12) cm(-2)) was formed in the nitrogen-incorporated layer. Electrical analyses indicated that the memory window of the Mo nanocrystal embedded in the nitride is larger than that in the oxide. A reliability test showed that the Mo nanocrystal in the nitride has better reliability than the Mo nanocrystal in the oxide, which was explained by an electrical field simulation.en_US
dc.language.isoen_USen_US
dc.titleCharge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitrideen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0022-3727/43/7/075106en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.citation.volume43en_US
dc.citation.issue7en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000274318200009-
dc.citation.woscount3-
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