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dc.contributor.authorHuang, W. L.en_US
dc.contributor.authorLabis, J.en_US
dc.contributor.authorRay, S. C.en_US
dc.contributor.authorLiang, Y. R.en_US
dc.contributor.authorPao, C. W.en_US
dc.contributor.authorTsai, H. M.en_US
dc.contributor.authorDu, C. H.en_US
dc.contributor.authorPong, W. F.en_US
dc.contributor.authorChiou, J. W.en_US
dc.contributor.authorTsai, M. -H.en_US
dc.contributor.authorLin, H. J.en_US
dc.contributor.authorLee, J. F.en_US
dc.contributor.authorChou, Y. T.en_US
dc.contributor.authorShen, J. L.en_US
dc.contributor.authorChen, C. W.en_US
dc.contributor.authorChi, G. C.en_US
dc.date.accessioned2014-12-08T15:07:25Z-
dc.date.available2014-12-08T15:07:25Z-
dc.date.issued2010-02-08en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.3304071en_US
dc.identifier.urihttp://hdl.handle.net/11536/5847-
dc.description.abstractX-ray absorption near-edge structure (XANES), extended x-ray absorption fine structures (EXAFS), and photoluminescence measurements were used to elucidate the microstructural and photoluminescence properties of ZnO nanowires (ZnO-NWs) that had been treated with Eu by thermal diffusion. The O K- and Eu L(3)-edge XANES and EXAFS spectra at the Zn K- and Eu L(3)-edge verified the formation of Eu(2)O(3)-like layer on the surface of ZnO-NWs. X-ray diffraction, XANES and EXAFS measurements consistently suggest the lack of substitutional doping of Eu ions at the Zn ion sites in the interior of ZnO-NWs. The clear sharp and intense emission bands in the range 610-630 nm of Eu-treated ZnO-NWs originated from the intra-4f transition of Eu ions in the Eu(2)O(3)-like surface layer.en_US
dc.language.isoen_USen_US
dc.subjecteuropiumen_US
dc.subjectEXAFSen_US
dc.subjectII-VI semiconductorsen_US
dc.subjectnanowiresen_US
dc.subjectphotoluminescenceen_US
dc.subjectthermal conductivityen_US
dc.subjectwide band gap semiconductorsen_US
dc.subjectXANESen_US
dc.subjectzinc compoundsen_US
dc.titleDetermination of the microstructure of Eu-treated ZnO nanowires by x-ray absorptionen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.3304071en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume96en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000274516900039-
dc.citation.woscount8-
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