完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Huang, W. L. | en_US |
dc.contributor.author | Labis, J. | en_US |
dc.contributor.author | Ray, S. C. | en_US |
dc.contributor.author | Liang, Y. R. | en_US |
dc.contributor.author | Pao, C. W. | en_US |
dc.contributor.author | Tsai, H. M. | en_US |
dc.contributor.author | Du, C. H. | en_US |
dc.contributor.author | Pong, W. F. | en_US |
dc.contributor.author | Chiou, J. W. | en_US |
dc.contributor.author | Tsai, M. -H. | en_US |
dc.contributor.author | Lin, H. J. | en_US |
dc.contributor.author | Lee, J. F. | en_US |
dc.contributor.author | Chou, Y. T. | en_US |
dc.contributor.author | Shen, J. L. | en_US |
dc.contributor.author | Chen, C. W. | en_US |
dc.contributor.author | Chi, G. C. | en_US |
dc.date.accessioned | 2014-12-08T15:07:25Z | - |
dc.date.available | 2014-12-08T15:07:25Z | - |
dc.date.issued | 2010-02-08 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.3304071 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/5847 | - |
dc.description.abstract | X-ray absorption near-edge structure (XANES), extended x-ray absorption fine structures (EXAFS), and photoluminescence measurements were used to elucidate the microstructural and photoluminescence properties of ZnO nanowires (ZnO-NWs) that had been treated with Eu by thermal diffusion. The O K- and Eu L(3)-edge XANES and EXAFS spectra at the Zn K- and Eu L(3)-edge verified the formation of Eu(2)O(3)-like layer on the surface of ZnO-NWs. X-ray diffraction, XANES and EXAFS measurements consistently suggest the lack of substitutional doping of Eu ions at the Zn ion sites in the interior of ZnO-NWs. The clear sharp and intense emission bands in the range 610-630 nm of Eu-treated ZnO-NWs originated from the intra-4f transition of Eu ions in the Eu(2)O(3)-like surface layer. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | europium | en_US |
dc.subject | EXAFS | en_US |
dc.subject | II-VI semiconductors | en_US |
dc.subject | nanowires | en_US |
dc.subject | photoluminescence | en_US |
dc.subject | thermal conductivity | en_US |
dc.subject | wide band gap semiconductors | en_US |
dc.subject | XANES | en_US |
dc.subject | zinc compounds | en_US |
dc.title | Determination of the microstructure of Eu-treated ZnO nanowires by x-ray absorption | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.3304071 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 96 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000274516900039 | - |
dc.citation.woscount | 8 | - |
顯示於類別: | 期刊論文 |