以三（三甲基矽烷基）甲基矽烷經低壓化學氣相沈積法成長碳化矽薄膜

Abstract

本實驗是以三(三甲基矽烷基)甲基矽烷為前驅物，以矽(111)晶片為基材 ，沈積溫度在873-1473K間，經低壓化學氣相沈積法及電漿加強化學氣相 沈積法來成長beta-SiC薄膜，薄膜表面形態會隨著沈積溫度及前驅物氣化 溫度的不同而改變，若使用電漿輔助沈積，可改善薄膜的結晶性，沈積溫 度在873-1473K之間，有兩種成長反應控制機構存在，在低溫時(1273K以 下)為表面反應控制機構，在高溫時(1273K以上)為質傳擴散控制機構，其 活化能為28.8kcal/mol，在外加電漿輔助下，其活化能為22.8kcal/mol， 薄膜主要為碳和矽鍵結的結構，碳矽的分佈均勻，其矽碳比例為1.1-1.8 之間，且隨沈積溫度的增加，矽/碳比有漸近 1之驅勢o Tris(trimethylsilyl)methylsilane was used as a single sou- cursor for depositing beta-SiC thin films low pressure chemical vapor deposition. Deposition of uniform on Si (111) substrate was carried out at temperatures 873-1473 K in a re-asma- enhanced hot-wall reactor.Morphology of the films there was altered by deposition temperature and the precursorization temperature.Their crystallinity could be improvedgen plasma was used to assist deposition.The results indicated that when deposition between 1073K and 1473K,there were two kinds of growth mechanisms.Below 1273K the reactionsurface reaction controlled and the energy of acti- vation was 28.8kcal/mol, above 1273K the process was diffusion controlled.When hydrogen plasma was used to assist the depo- sition,the energy of activation was 22.8kcal/mol.Carbon andn distributions are oniform in the films. Elementalwas characterized to be C/ Si=1.1-1.8.In general the Si/C ratios of the films were close to 1 at high temper-of deposition.