Investigation of Electrostatic Integrity for Ultra-Thin-Body GeOI MOSFET Using Analytical Solution of Poisson's Equation

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DC 欄位	值	語言
dc.contributor.author	Hu, Vita Pi-Ho	en_US
dc.contributor.author	Wu, Yu-Sheng	en_US
dc.contributor.author	Su, Pin	en_US
dc.date.accessioned	2014-12-08T15:01:50Z	-
dc.date.available	2014-12-08T15:01:50Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-4244-2539-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/586	-
dc.description.abstract	The electrostatic integrity for UTB GeOI MOSFET is examined comprehensively by using analytical solution of Poisson's equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (L(g)) to channel thickness (T(ch)) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of buried oxide thickness (T(BOX)) and back-gate bias (V(back-gate)) on the electrostatic integrity of GeOI devices are also examined.	en_US
dc.language.iso	en_US	en_US
dc.title	Investigation of Electrostatic Integrity for Ultra-Thin-Body GeOI MOSFET Using Analytical Solution of Poisson's Equation	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS	en_US
dc.citation.spage	210	en_US
dc.citation.epage	213	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000271122100053	-
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