熱電堆原理分析與製程探討

Abstract

本論文研究方向在於利用MOS相容製程,以達高熱阻.熱電材質為多晶矽及 鋁,結構為蜘蛛狀的放射結構.文中從熱電效應的分析P,N型矽seebeck電壓 的計算及元件結構的設計均有研究.實驗以三明治(氮化矽/二氧化矽/氮化 矽)的結構補償應力.應力量測及結構加強是未來努力的方向. We are using the standard MOS process and anisotropic etching technology to fabricate a floating-membrane, which is high thermal resistance. The thermoelectric materials are polysilicon and aluminum. It is a spidery structure. The investigation on thermoelectric effect analysis, calculation of P,N type silicon seebeck voltage and structure design wewe performed. During floating-membrane forming, the thermal stress, which could be compensated by sandwitch structure (Nitride/Oxide /Nitride). To measure stress and enhance structure is the goal of future fabrication.