雙異質結構與量子井GRIN-SCH結構之脊狀波導式半導體發光元件之試製

Abstract

在本論文中,我們嘗試製作脊狀波導式半導體發光元件,其結構包含傳統雙 異質接面與GRIN-SCH單層量子井兩種.在製作過程中,藉由對每項儀器製程 最佳條件之研究,試擬一套脊狀波導式半導體發光元件之製作流程作為參 考.在阻絕電流之防護層製作上,我們嘗試沉積氮化矽與氧化覆蓋層表面而 形成氧化鋁兩種作法,實驗結果顯示後者具有較佳之電流阻隔效果.除此之 外,我們亦嘗試蒸鍍一層鈦金屬(約60埃)以加強金鈹合金與氮化矽間之附 著力.最後,對於實驗所試製之發光元件進行特性量測,並對製程及結果進 行討論. In this thesis, we tried to fabricate a ridge waveguide semi- conductor light emitting device, including conventional double- heterostructure and GRIN-SCH SQW. We have developed a fabrication process for ridge waveguide semiconductor device and offered optimal conditions for several processing equipments to improve the fabrication reliability. In the fabrication process of current blocking layer, we tried to oxidize the surface of cladding layer between ridges to form a Aluminum oxide layer. We also used a silicon nitride layer as an alternative approach. The experimental results have revealed that the former had a better effect in current blocking. We also tried to evaporate a thin titanium layer ( about 60A ) as an adhension promoter between gold beryllium and silicon nitride. Finally, the current versus voltage ( I - V ), light output power versus input pumping ( pulsed & C.W. )current ( L - I ), and spectrum characteristics were measured. Some experimental results and fabrication processes were discussed also.