利用脈衝式雷射蒸鍍硫化錳鎘薄膜及其特性之研究

Abstract

本研究利用脈衝式雷射蒸鍍各種不同錳離子的硫化錳鎘薄膜並研究其特性 。從X光繞射可得知，這些薄膜具有高方向性，而且其晶格常數隨著錳離 子濃度的增加而變小；從掃描式電子顯微鏡看出其晶粒的大小大約為500 埃到800埃；從吸收光譜得到其能隙也隨著錳離子含量的大小而改變；也 分析他們的拉曼光譜，發現主峰有分裂且其位置往高能偏移。 In this work, the pulse laser evaporation technique was successfully used in growing Cd1-XMnXS thin films on silicon and glasses. The Mn concentration of Cd1-XMnXS thin films varied from 0 to 0.96 ( by EDAX ). The lattice parameters "a" and "c" were calculated from XRD patterns and compared with the Vegard law. The calculated lattice parameters approximately match with the theoretical value when X<0.7. The grain size was found about 500∼800 Angstrom in average measured by SEM. The energy gap (Eg) of deposited films determined by absorption spectra increased as X is increased. In the investigation of Raman scattering, it was found that the 1LO peak shift to high energy and split into two modes : 1LO ( ) and 1TO ( ). modes.