次微米LDD結構金氧半元件之熱載子可靠性分析與模式研究

Abstract

本論文〔１〕利用電荷幫浦法發展出一套高解析度的擷取介面狀態新技術 ；〔２〕推導出一套次微米ＬＤＤ金氧半元件的可靠性ＳＰＩＣＥ模式； 〔３〕發展出第一套適用於各種汲極結構金氧半元件受熱載子效應影響前 後之準確的新基片電流解析模式；〔４〕發展出一套適用於二維元件模擬 器的電子移動率模式，其特點是僅需三個可以容易分別作校正的參數。結 合這些新的分析方法、元件模式和元件模擬，吾人探討ＬＤＤ結構金氧半 元件中熱載子效應所引起的汲極電流和基片電流退化機制。結合本研究的 重要成果，吾人建立一套可供熱載子可靠性分析和模擬使用的整合技術電 腦輔助系統。 In this thesis, we develop (1) a new interface state profiling technique based on charge pumping measurement; (2) a SPICE- compatible device reliability model for submicron LDD MOSFET's; (3) a new and accurate analytical substrate current model for both pre-stressed and post- stressed MOSFET's with any kind of drain structures for the first time; (4) an easy-to-calibrate and accurate mobility model for 2-D device simulation. With the aids of these new characterization methods, device models and device simulation, the mechanisms of hot carrier induced drain current and substrate current degradation in various LDD MOSFET' s are analyzed. Based on the accomplishments of this work, an integrated TCAD (Technology Computer-Aided-Design) system for hot carrier reliability analysis and simulation has been established.