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dc.contributor.author馬錦章en_US
dc.contributor.authorJiin-Jang Maaen_US
dc.contributor.author吳慶源en_US
dc.contributor.authorChing-Yuan Wuen_US
dc.date.accessioned2014-12-12T02:13:37Z-
dc.date.available2014-12-12T02:13:37Z-
dc.date.issued1994en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT830430005en_US
dc.identifier.urihttp://hdl.handle.net/11536/59187-
dc.description.abstract本論文所探討的主題為金氧半場效電晶體元件的基本直流特性。我們主要 採取解析的觀點來研究由次微米元件上所提供的測量數據。n-型通道元件 與p-型通道元件被賦予同等的重視。論文中所涵蓋的重要議題包括 : (1) 金氧半場效電晶體元件中載子移動率的計測與模擬, (2) 臨界電壓 的研究,(3) 發展解析模式以計算元件電流,以及 (4)建立完整的理論作 為設計縮小化元件的依據。 In this thesis, the fundamental DC characteristics of complementary MOSFET's are investigated in detail. We mainly take the analytic approach to analyze and describe the measurement results obtained from the submicrometer MOS devices, and both n- and p-channel devices are equally emphasized without prejudice. The whole thesis covers the following topics which are extremely important for MOSFET's : (1) Characterization and modeling of the carrier mobilities in MOSFET, (2) Investigations on the threshold-voltage behaviors, (3) Calculations of the drain current, and (4) Scaling theory for the device of MOSFET's.zh_TW
dc.language.isoen_USen_US
dc.subject金氧半場效電晶體,移動率, 臨界電壓,縮小理論。zh_TW
dc.subjectMOSFET, Mobility, Threshold Voltage, Scaling Theory.en_US
dc.title次微米互補式金氧半場效電晶體直流特性的新二維解析模式zh_TW
dc.titleNew Analytic Models for the DC Characteristics of Submicrometer Complementary MOSFET'sen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
Appears in Collections:Thesis